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| Up to 6 GHz Low Noise Silicon Bipolar Transistor Technical Data AT-41470 Features * Low Noise Figure: 1.6 dB Typical at 2.0 GHz 3.0 dB Typical at 4.0 GHz * High Associated Gain: 14.5 dB Typical at 2.0 GHz 10.5 dB Typical at 4.0 GHz * High Gain-Bandwidth Product: 8.0 GHz Typical fT * Hermetic, Gold-ceramic Microstrip Package finger interdigitated geometry yields an intermediate sized transistor with impedances that are easy to match for low noise and moderate power applications. This device is designed for use in low noise, wideband amplifier, mixer and oscillator applications in the VHF, UHF, and microwave frequencies. An optimum noise match near 50 at 1 GHz , makes this device easy to use as a low noise amplifier. The AT-41470 bipolar transistor is fabricated using Hewlett-Packard's 10 GHz fT Self-Aligned-Transistor (SAT) process. The die is nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ionimplantation, self-alignment techniques, and gold metalization in the fabrication of this device. 70 mil Package Description Hewlett-Packard's AT-41470 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-41470 is housed in a hermetic, high reliability gold-ceramic 70 mil microstrip package. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different functions. The 14 emitter 4-119 5965-8927E AT-41470 Absolute Maximum Ratings Symbol VEBO VCBO VCEO IC PT Tj TSTG Parameter Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Voltage Collector Current Power Dissipation [2,3] Junction Temperature Storage Temperature Units V V V mA mW C C Absolute Maximum[1] 1.5 20 12 60 500 200 -65 to 200 Thermal Resistance [2,4]: jc = 175C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25C. 3. Derate at 5.7 mW/C for TC > 113C. 4. The small spot size of this technique results in a higher, though more accurate determination of jc than do alternate methods. See MEASUREMENTS section "Thermal Resistance" for more information. Electrical Specifications, TA = 25C Symbol |S21E|2 P1 dB G1 dB NFO Parameters and Test Conditions Insertion Power Gain; VCE = 8 V, IC = 25 mA Power Output @ 1 dB Gain Compression VCE = 8 V, IC = 25 mA 1 dB Compressed Gain; VCE = 8 V, IC = 25 mA Optimum Noise Figure: VCE = 8 V, IC = 10 mA f = 2.0 GHz f = 4.0 GHz f = 2.0 GHz f = 4.0 GHz f = 2.0 GHz f = 4.0 GHz f = 1.0 GHz f = 2.0 GHz f = 4.0 GHz f = 1.0 GHz f = 2.0 GHz f = 4.0 GHz Units dB dBm dB dB Min. Typ. Max. 12.0 6.5 19.0 18.5 15.0 10.5 1.3 1.6 3.0 18.5 14.5 10.5 8.0 30 150 300 0.2 1.0 1.9 GA Gain @ NFO; VCE = 8 V, IC = 10 mA dB 13.0 GHz -- A A pF fT hFE ICBO IEBO CCB Gain Bandwidth Product: VCE = 8 V, IC = 25 mA Forward Current Transfer Ratio; VCE = 8 V, IC = 10 mA Collector Cutoff Current; VCB = 8 V Emitter Cutoff Current; VEB = 1 V Collector Base Capacitance[1]: VCB = 8 V, f = 1 MHz 0.2 Note: 1. For this test, the emitter is grounded. 4-120 AT-41470 Typical Performance, TA = 25C 24 21 18 GA 24 16 P1 dB (dBm) 20 GAIN (dB) 15 14 13 12 GA 10 V 6V 4V 2.0 GHz 4.0 GHz P1dB GAIN (dB) 15 12 9 6 NF50 16 8 6 12 2.0 GHz 4 G1dB NFO 4V 6V 10 V G1 dB (dB) 4 NFO 3 2 1 8 3 0 0.5 1.0 2.0 2 0 3.0 4.0 5.0 4 0 10 20 30 40 0 10 20 30 40 FREQUENCY (GHz) IC (mA) IC (mA) Figure 1. Noise Figure and Associated Gain vs. Frequency. VCE = 8 V, IC = 10mA. Figure 2. Output Power and 1 dB Compressed Gain vs. Collector Current and Frequency. VCE = 8 V. Figure 3. Optimum Noise Figure and Associated Gain vs. Collector Current and Collector Voltage. f = 2.0 GHz. 16 40 2.0 GHz 20 GAIN (dB) 14 12 35 30 MSG 16 |S21E|2 GAIN (dB) 1.0 GHz GAIN (dB) 10 8 GA 4.0 GHz 25 20 15 10 5 0 0.1 0.3 0.5 1.0 3.0 6.0 FREQUENCY (GHz) |S21E|2 MAG 12 2.0 GHz 4 NFO 2.0 GHz NFO (dB) 4.0 GHz 6 8 4.0 GHz 4 2 0 10 20 30 40 0 0 0 10 20 30 40 IC (mA) IC (mA) Figure 4. Optimum Noise Figure and Associated Gain vs. Collector Current and Frequency. VCE = 8 V. Figure 5. Insertion Power Gain, Maximum Available Gain and Maximum Stable Gain vs. Frequency. VCE = 8 V, IC = 25 mA. Figure 6. Insertion Power Gain vs. Collector Current and Frequency. VCE = 8 V. 4-121 NFO (dB) NF (dB) 4.0 GHz AT-41470 Typical Scattering Parameters, Common Emitter, ZO = 50 , TA = 25C, VCE = 8 V, IC = 10 mA Freq. S11 S21 GHz Mag. Ang. dB Mag. Ang. 0.1 .79 -37 28.4 26.27 157 0.5 .65 -120 22.3 13.05 110 1.0 .61 -155 17.1 7.17 88 1.5 .60 -172 13.9 4.93 76 2.0 .60 176 11.5 3.75 65 2.5 .61 169 9.7 3.06 59 3.0 .62 161 8.3 2.59 51 3.5 .61 154 7.0 2.24 42 4.0 .60 146 5.9 1.97 32 4.5 .60 137 4.9 1.77 24 5.0 .60 127 4.1 1.61 15 5.5 .61 115 3.4 1.47 6 6.0 .64 104 2.6 1.34 -4 dB -39.2 -30.8 -28.9 -27.5 -26.4 -26.0 -24.7 -23.2 -21.4 -20.1 -19.5 -18.3 -17.4 S12 Mag. .011 .029 .036 .042 .048 .050 .058 .069 .085 .099 .106 .121 .135 S22 Ang. 57 40 41 46 46 58 61 63 62 59 59 56 53 Mag. .94 .62 .52 .50 .50 .48 .49 .51 .52 .55 .57 .58 .57 Ang. -13 -30 -32 -36 -40 -41 -48 -56 -63 -69 -75 -80 -87 AT-41470 Typical Scattering Parameters, Common Emitter, ZO = 50 , TA = 25C, VCE = 8 V, IC = 25 mA Freq. S11 S21 GHz Mag. Ang. dB Mag. Ang. 0.1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 .64 .61 .61 .60 .61 .61 .62 .62 .62 .61 .60 .61 .64 -62 -146 -170 177 167 163 156 150 142 134 123 112 102 32.5 23.7 18.1 14.7 12.3 10.4 9.0 7.7 6.6 5.6 4.8 4.0 3.2 42.11 15.31 8.00 5.42 4.10 3.32 2.81 2.44 2.13 1.91 1.73 1.59 1.45 147 100 83 72 62 58 50 41 32 24 15 6 -3 dB -40.9 -34.4 -30.2 -29.1 -27.1 -25.7 -23.6 -22.6 -21.7 -20.1 -18.9 -18.1 -17.3 S12 Mag. .009 .019 .031 .035 .044 .052 .066 .074 .082 .099 .113 .124 .136 S22 Ang. 75 47 53 62 60 67 67 67 63 62 59 54 50 Mag. .85 .50 .44 .44 .44 .43 .44 .46 .48 .50 .52 .54 .53 Ang. -19 -30 -31 -34 -39 -39 -46 -55 -62 -68 -73 -78 -85 A model for this device is available in the DEVICE MODELS section. AT-41470 Noise Parameters: VCE = 8 V, IC = 10 mA Freq. GHz 0.1 0.5 1.0 2.0 4.0 NFO dB 1.2 1.2 1.3 1.6 3.0 opt Mag .12 .11 .06 .21 .45 Ang 5 17 35 160 -150 RN/50 0.17 0.17 0.17 0.16 0.20 4-122 70 mil Package Dimensions .040 1.02 4 EMITTER .020 .508 BASE 1 COLLECTOR 3 2 EMITTER Notes: (unless otherwise specified) 1. Dimensions are in mm 2. Tolerances in .xxx = 0.005 mm .xx = 0.13 .004 .002 .10 .05 .070 1.70 .495 .030 12.57 .76 .035 .89 Package marking is "414" 4-123 |
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